Characterization of SOI MOSFETs by means of charge-pumping

Authors

  • Grzegorz Głuszko
  • Sławomir Szostak
  • Heinrich Gottlob
  • Max Lemme
  • Lidia Łukasiak

DOI:

https://doi.org/10.26636/jtit.2007.3.832

Keywords:

charge-pumping, electrical characterization, interface traps, SOI MOSFET

Abstract

This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface

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Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
G. Głuszko, S. Szostak, H. Gottlob, M. Lemme, and L. Łukasiak, “Characterization of SOI MOSFETs by means of charge-pumping”, JTIT, vol. 29, no. 3, pp. 67–72, Sep. 2007, doi: 10.26636/jtit.2007.3.832.

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