Electrical characterization of ISFETs

Authors

  • Daniel Tomaszewski
  • Chia-Ming Yang
  • Bohdan Jaroszewicz
  • Michał Zaborowski
  • Piotr Grabiec
  • Dorota G. Pijanowska

DOI:

https://doi.org/10.26636/jtit.2007.3.830

Keywords:

ISFET, CMOS, electrical measurements, I-V characteristics, characterization, parameters extraction

Abstract

Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).

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Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
D. Tomaszewski, C.-M. Yang, B. Jaroszewicz, M. Zaborowski, P. Grabiec, and D. G. Pijanowska, “Electrical characterization of ISFETs”, JTIT, vol. 29, no. 3, pp. 55–60, Sep. 2007, doi: 10.26636/jtit.2007.3.830.

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