Electrical characterization of ISFETs
DOI:
https://doi.org/10.26636/jtit.2007.3.830Keywords:
ISFET, CMOS, electrical measurements, I-V characteristics, characterization, parameters extractionAbstract
Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).
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