A model of partially-depleted SOI MOSFETs in the subthreshold range

Authors

  • Daniel Tomaszewski
  • Lidia Łukasiak
  • Andrzej Jakubowski
  • Krzysztof Domański

DOI:

https://doi.org/10.26636/jtit.2001.1.39

Keywords:

SOI MOSFET, subthreshold range, floating body, transconductance

Abstract

A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the „pinch-off” region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.

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Published

2001-03-30

Issue

No. 1 (2001)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2001 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
D. Tomaszewski, L. Łukasiak, A. Jakubowski, and K. Domański, “A model of partially-depleted SOI MOSFETs in the subthreshold range”, JTIT, vol. 3, no. 1, pp. 61–64, Mar. 2001, doi: 10.26636/jtit.2001.1.39.

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