On-wafer wideband characterization: a powerful tool for improving the IC technologies

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DOI:

https://doi.org/10.26636/jtit.2007.2.811

Keywords:

silicon-on-insulator, MOSFET, wideband characterization, microwave frequency, extraction techniques, smallsignal equivalent circuit

Abstract

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.

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References

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Submitted

2023-06-25

Published

2007-06-30

Issue

No. 2 (2007)

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ARTICLES FROM THIS ISSUE

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How to Cite

[1]
D. Lederer and J.-P. Raskin, “On-wafer wideband characterization: a powerful tool for improving the IC technologies”, JTIT, vol. 28, no. 2, pp. 69–77, Jun. 2007, doi: 10.26636/jtit.2007.2.811.

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