Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure

Authors

  • Andrzej Kudła Institute of Electron Technology, Poland
  • Henryk Przewłocki Institute of Electron Technology, Poland
  • Danuta Brzezińska Institute of Electron Technology, Poland
  • Lech Kazimierz Borowicz Institute of Electron Technology, Poland

DOI:

https://doi.org/10.26636/jtit.2005.1.283

Keywords:

MIS structure, photoelectrical methods, internal photoemission, contact potential difference

Abstract

We have shown that using focused UV laser beam in photoelectric methods it is possible to measure local φMS values over the gate area of a single MOS structure. The φMS distribution is such that its values are highest far away from the gate edges regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. Examples of measurement results and description of the measurement system are presented. The dependence of the φMS value on the exposure time and the power density of UV light is discussed.

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References

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Submitted

2023-04-09

Published

2005-03-30

Issue

No. 1 (2005)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2005 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
A. Kudła, H. Przewłocki, D. Brzezińska, and L. K. Borowicz, “Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure”, JTIT, vol. 19, no. 1, pp. 112–114, Mar. 2005, doi: 10.26636/jtit.2005.1.283.

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