Effects of stress annealing on the electrical and the optical properties of MOS devices

Authors

  • Witold Rzodkiewicz Institute of Electron Technology, Poland
  • Andrzej Kudła Institute of Electron Technology, Poland
  • Zbigniew Sawicki Institute of Electron Technology, Poland
  • Henryk M. Przewłocki Institute of Electron Technology, Poland

DOI:

https://doi.org/10.26636/jtit.2005.1.282

Keywords:

stress, MOS, Si-SiO2 system, electrical parameters, refractive index

Abstract

In this paper we show the results of a study of the effects of high-temperature stress annealing in nitrogen on the refraction index of SiO2 layers and electrical properties in metal-oxide-semiconductor (MOS) devices. We have experimentally characterized the dependence of the reduced effective contact potential difference (ECPD), the effective oxide charge density (Neff), and the mid-gap interface trap density (Dit) on the annealing conditions. Subsequently, we have correlated such properties with the dependence of the refraction index and oxide stress on the annealing conditions and silicon dioxide thickness. Also, the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions has been experimentally determined. We consider the contributions of the thermal-relaxation and nitrogen incorporation processes in determining changes in the SiO2 layer refractive index and the electrical properties with annealing time. This description is consistent with other annealing studies carried out in argon, where only the thermal relaxation process is present.

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References

[1] E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York: Wiley, 1982.
View in Google Scholar

[2] H. M. Przewłocki and H. Z. Massoud, „Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal-oxide-semiconductor devices”, J. Appl. Phys., vol. 92, pp. 2198-2201, 2002.
View in Google Scholar

[3] H. Z. Massoud and H. M. Przewłocki, „Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices”, J. Appl. Phys., vol. 92, pp. 2202-2206, 2002.
View in Google Scholar

[4] W. Primak and D. Post, „Photoelastic constants of vitreous silica and its elastic coefficient of refractive index”, J. Appl. Phys., vol. 30, pp. 779-789, 1959.
View in Google Scholar

[5] G. Ghibaudo, „Modeling of silicon oxidation based on stress relaxation”, Phil. Mag., vol. B 55, pp. 147-158, 1987.
View in Google Scholar

[6] A. Szekeres, „Stress in the SiO2/Si structures formed by thermal oxidation”, in Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices. Dordrecht: Kluwer, 1998, pp. 65-78.
View in Google Scholar

[7] B. Leroy, „Stresses and silicon interstitials during the oxidation of a silicon substrate”, Phil. Mag., vol. B 55, pp. 159-199, 1987.
View in Google Scholar

[8] C. M. Herzinger, B. Yohs, W. A. McGahan, and J. A. Woollam, „Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation”, J. Appl. Phys., vol. 83, pp. 3323-3336, 1998.
View in Google Scholar

[9] A. Brenner and S. Senderoff, „Calculation of stress in electrodeposits from the curvature of plated strip”, J. Res. Nat. Bur. Stand., vol. RP 1954, no. 42, pp. 105-123, 1949.
View in Google Scholar

[10] B. Leroy, „Passivation-induced phenomena in silicon substrate”, in Instabilities in Silicon Devices. Amsterdam: North Holland, 1986, pp. 155-210.
View in Google Scholar

[11] P. H. Townsend, D. M. Barnett, and T. A. Brenner, „Elastic relationship in layered composite media with approximation for the case of thin films on a thick substrate”, J. Appl. Phys., vol. 62, pp. 4438-4444, 1987.
View in Google Scholar

[12] C. A. Klein, „How accurate are Stoney’s equation and recent modifications”, J. Appl. Phys., vol. 88, pp. 5487-5489, 2000.
View in Google Scholar

[13] W. A. Brantley, „Calculated elastic constants for stress problems associated with semiconductor devices”, J. Appl. Phys., vol. 44, pp. 534-535, 1973.
View in Google Scholar

[14] Tencor FLX-2320 Thin Film Stress Measurement, User Manual, Rev. B, 1995.
View in Google Scholar

[15] H. M. Przewłocki, „Theory and applications of internal photoemission in the MOS system at low electric fields”, Solid-State Electron., vol. 45, pp. 1241-1250, 2001.
View in Google Scholar

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Submitted

2023-04-09

Published

2005-03-30

Issue

No. 1 (2005)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2005 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
W. Rzodkiewicz, A. Kudła, Z. Sawicki, and H. M. Przewłocki, “Effects of stress annealing on the electrical and the optical properties of MOS devices”, JTIT, vol. 19, no. 1, pp. 115–119, Mar. 2005, doi: 10.26636/jtit.2005.1.282.

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