Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator

Abstract

The properties of barium titanate (BaTiO₃, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO₃ thin films (containing La₂O₃ admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO₃ + La₂O₃ (2% wt.) target. In the paper transfer and output I−V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (V_TH) are determined and discussed.