Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN film

Abstract

Properties of Al electric contacts to Si(p) surface exposed to fluorine-based plasma etching of nanocrystalline cubic boron nitride (c-BN) film grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry etched surface of Si(p) wafers. In addition, a part of the investigated samples was annealed in nitrogen atmosphere at the temperature of 673 K. Analysis of contract properties is based on current-voltage (I-V) measurements of the produced Al-Si structures. The presented investigations were performed in order to evaluate the efficiency of the applied plasma etching method of nanocrystalline c-BN from the viewpoint of its influence on the properties of metal contacts formed subsequently and thus on the performance of electronic devices involving the use of boron nitride.