Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond
DOI:
https://doi.org/10.26636/jtit.2009.4.969Keywords:
gadolinium silicate, interfacial layer, lanthanides, rare earth oxidesAbstract
Over the last decade there has been a significant amount of research dedicated to finding a suitable high-k/metal gate stack to replace conventional SiON/poly-Si electrodes. Materials innovations and dedicated engineering work has enabled the transition from research lab to 300 mm production a reality, thereby making high-k/metal gate technology a pathway for continued transistor scaling. In this paper, we will present current status and trends in rare earthbased materials innovations; in particular Gd-based, for the high-k/metal gate technology in the 22 nm node. Key issues and challenges for the 22 nm node and beyond are also highlighted.
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