Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base

Authors

  • Agnieszka Zaręba
  • Lidia Łukasiak
  • Andrzej Jakubowski

DOI:

https://doi.org/10.26636/jtit.2007.3.836

Keywords:

heterojunction bipolar transistor, SiGe, base width modulation

Abstract

A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.

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Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
A. Zaręba, L. Łukasiak, and A. Jakubowski, “Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base”, JTIT, vol. 29, no. 3, pp. 88–92, Sep. 2007, doi: 10.26636/jtit.2007.3.836.

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