Development of 3C-SiC MOSFETs
DOI:
https://doi.org/10.26636/jtit.2007.2.808Keywords:
vertical MOSFET, 3C-SiC, channel mobilityAbstract
The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed. The vertical devices had hexagonal and square unit cell designs with 2 μm and 4 μm channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.
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