Roadmap for SiC power devices
DOI:
https://doi.org/10.26636/jtit.2000.3-4.30Keywords:
SiC power devices, roadmap for, status, development trends, unipolar and bipolar SiC devices, super junction devices, applications, system benefits, current handling capability, simulationsAbstract
Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems. The challenges and prospects of SiC power device development are reviewed considering different device types. A close correlation between an exponential increase of current handling capability during recent five years and improvement in substrate quality is demonstrated. The voltage range of silicon and SiC unipolar and bipolar power devices with respect to the on-state voltage is determined based on device simulation. 4H-SiC unipolar devices are potentially superior to all silicon devices up to 10 kV. 4H-SiC unipolar devices are superior to all SiC bipolar devices up to 8-9 kV. The low end of SiC unipolar devices is determined to be around 200 V provided substrate resistance is reduced by thinning the substrate down to 100 μm. The influence of reduced channel mobility on the specific on-state resistance of 4H-SiC DMOSFETs and UMOSFETs is shown. It has been demonstrated that 6H-SiC DMOSFETs could be a better choice compared to 4H-SiC MOSFETs in the voltage range below 600 V utilising better channel mobility obtainable so far on 6H-SiC polytype. An impact of super junction (SJ) concept on silicon and SiC MOSFET specific on-resistance limits is demonstrated.
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References
[1] E. R. Brown, "Megawatt solid-state electronics", Solid State Electron., vol. 42, no. 12, pp. 2119-2130, 1998.
View in Google Scholar
[2] Y. Sugawara, "Performance and application impact of widegap power semiconductor devices focusing on SiC", Electron. Commun. Jap., vol. 82, no. 5, pp. 36-45, 1999.
View in Google Scholar
[3] K. Rottner, M. Frischholz, T. Myrtveit, D. Mou, K. Nordgren, A. Henry, C. Hallin, U. Gustafsson, and A. Schoner, "SiC power devices for high voltage applications", Mat. Sci. Eng., vol. B61-62, pp. 330-338, 1999.
View in Google Scholar
[4] M. Bakowski, U. Gustafsson, and U. Lindefelt, "Simulation of SiC high power devices", Phys. Stat. Sol. A, vol. 162, pp. 421-440, 1997.
View in Google Scholar
[5] A. Itoh, T. Kimoto, and H. Matsunami, "Low power-loss 4H-SiC Schottky rectifiers with high blocking voltage", Inst. Phys. Conf. Ser., no. 142, pp. 689-692, 1996 (paper presented at SCRMC, Kyoto, Japan, 1995).
View in Google Scholar
[6] T. Kimoto, Q. Wahab, A. Ellison, U. Forsberg, M. Tuominen, R. Yakimova, A. Henry, and E. Janzen, "High-voltage (> 2.5 kV) 4H-SiC Schottky rectifiers processed on Hot-Wall CVD and high temperature CVD layers", Mat. Sci. Forum, vol. 264-268, pp. 921-924, 1998.
View in Google Scholar
[7] H. M. McGlothlin, D. T. Morisette, J. A. Cooper, and M. R. Melloch, "4 kV silicon carbide Schottky diodes for high-frequency switching applications", in IEEE Dev. Res. Conf., Santa Barbara, CA, June 28-30, 1999 (to be published).
View in Google Scholar
[8] P. G. Neudeck, D. J. Larkin, J. A. Powell, and L. G. Matus, "High voltage 6H-SiC rectifiers: prospects and progress", in IEEE Dev. Res. Conf., 1993.
View in Google Scholar
[9] O. Kordina, J. P. Bergman, A. Henry, E. Janzen, S. Savage, J. Andre, L. P. Ramberg, U. Lindefelt, W. Hermansson, and K. Bergman, "A 4.5 kV 6H silicon carbide rectifier", Appl. Phys. Lett., vol. 67, pp. 1561-1563, 1995.
View in Google Scholar
[10] Y. Sugawara, K. Asano, R. Singh, and J. W. Palmour, "6.2 kV 4H-SiC pin diode with low forward voltage drop", Mat. Sci. Forum, vol. 338-342, pp. 1243-1246, 2000, Mat. Sci. Forum, vol. 338-342, pp. 1371-1374, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 170).
View in Google Scholar
[11] Private communication.
View in Google Scholar
[12] Y. Sugawara, K. Asano, and R. Saito, "3.6 kV 4H-SiC JBS diodes with low Ron", Mat. Sci. Forum, vol. 338-342, pp. 1183-1186, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 171).
View in Google Scholar
[13] K. Asano, T. Hayashi, R. Saito, and Y. Sugawara, "High temperature characteristics of 3.7 kV high voltage 4H-SiC JBS", in Proc. 12th ISPSD, Toulouse, France, May 22-25, 2000, pp. 97-100.
View in Google Scholar
[14] A. K. Agarwal, J. B. Casady, L. B. Rowland, W. F. Valek, and C. D. Brandt, "1400 V 4H-SiC power MOSFETs", Mat. Sci. Forum, vol. 264-268, pp. 989-992, 1998.
View in Google Scholar
[15] J. Spitz, M. R. Melloch, J. A. Cooper, and M. A. Capano, "High voltage (2.6 kV) lateral DMOSFETs in 4H-SiC", Mat. Sci. Forum, vol. 264-268, pp. 1005-1008, 1998.
View in Google Scholar
[16] Y. Sugawara and K. Asano, "1.4 kV 4H-SiC UMOSFET with low specific on-resistance", in Proc. 10th ISPSD, Kyoto, Japan, June 3-6, 1998, pp. 119-122.
View in Google Scholar
[17] D. Peters, R. Schorner, P. Friedrichs, J. Volkl, H. Mitlehner, and D. Stephani, "An 1800 V triple implanted 6H-SiC MOSFET", IEEE Trans. Electron Dev., vol. 46, no. 3, pp. 542-545, 1999.
View in Google Scholar
[18] P. Friedrichs, H. Mitlehner, W. Bartsch, K. O. Dohnke, R. Kaltschmidt, U. Weinert, B. Weis, and D. Stephani, "Static and dynamic characteristics of 4H-SiC JFETs designed for different blocking categories", Mat. Sci. Forum, vol. 338-342, pp. 1243-1246, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 75, to be published).
View in Google Scholar
[19] P. Friedrichs, H. Mitlehner, K. O. Dohnke, D. Peters, R. Schorner, U. Weinert, E. Baudelot, and D. Stephani, "SiC power devices with low on-resistance for fast switching applications", in Proc. 12th ISPSD, Toulouse, France, May 22-25, 2000, pp. 213-216.
View in Google Scholar
[20] Y. Sugawara, K. Asano, R. Singh, J. Palmour, and D. Takayama, "4.5 kV novel high voltage high performance SiC-FET SIAFET", in Proc. 12th ISPSD, Toulouse, France, May 22-25, 2000, pp. 105-108.
View in Google Scholar
[21] J. B. Casady, A. K. Agarwal, L. B. Rowland, R. R. Siergiej, S. Seshadri, S. Mani, J. Barrows, D. Piccone, P. A. Sanger, and C. D. Brandt, "4H-SiC gate turn-off (GTO) thyristor development", Mat. Sci. Forum, vol. 264-268, pp. 1069-1072, 1998.
View in Google Scholar
[22] A. Agarwal, S.-H. Ryu, R. Singh, and J. Palmour, "2600 V, 12 A, 4H-SiC, asymmetrical gate turn-off (GTO) thyristor development", Mat. Sci. Forum, vol. 338-342, pp. 1387-1390, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 474).
View in Google Scholar
[23] H. Lendenmann, N. Johansson, D. Mou, M. Frischholz, B. Astrand, P. Isberg, and C. Ovren, "Operation of a 2500 V 150 A Si-IGBT/SiC diode module", Mat. Sci. Forum, vol. 338-342, pp. 1423-1426, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 189).
View in Google Scholar
[24] C. H. Carter, V. F. Tsvedkov, R. C. Glass, D. Henshall, M. Brady, St. G. Muller, O. Kordina, K. Irvine, J. A. Edmond, H. S. Kong, R. Singh, S. T. Allen, and J. W. Palmour, "Progress in SiC: from material growth to commercial device development", Mat. Sci. Eng., vol. B61-61, pp. 1-8, 1999.
View in Google Scholar
[25] G. M. Dolny, D. T. Morisette, P. M. Shenoy, M. Zafrani, J. Gladish, J. M. Woodall, J. A. Cooper, and M. R. Melloch, "Static and dynamic characterisation of large-area high-current-density SiC Schottky diodes", in IEEE Dev. Res. Conf., Charlottesville, VA, June 22-24, 1998.
View in Google Scholar
[26] R. Rupp, M. Treu, A. Mauder, E. Griebl, W. Werner, W. Bartsch, and D. Stephani, "Performance and reliability issues of SiC-Schottky diodes", Mat. Sci. Forum, vol. 338-342, pp. 1167-1170, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 37).
View in Google Scholar
[27] R. Held, M. Fullmann, and E. Niemann, "SiC-power rectifiers", Mat. Sci. Forum, vol. 338-342, pp. 1407-1410, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 7).
View in Google Scholar
[28] P. G. Neudeck, J. B. Petit, and C. S. Salupo, "Silicon carbide buried gate junction field effect transistors for high-temperature power electronic applications", in Second Int. High Temp. Electron. Conf., Charlotte, NC, June 6-10, 1994.
View in Google Scholar
[29] A. O. Konstantinov and H. Bleichner, "Bright-line defect formation in silicon carbide injection diodes", Appl. Phys. Lett., vol. 71 (25), pp. 3700-3702, 1997.
View in Google Scholar
[30] J. A. Powell and D. J. Larkin, "Process-induced morphological defects in epitaxial CVD silicon carbide", Phys. Stat. Sol. B, vol. 202, pp. 529-548, 1997.
View in Google Scholar
[31] U. Zimmerman, A. Hallen, A. O. Konstantinov, and B. Breitholz, "Investigations of microplasma breakdown in 4H silicon carbide", in Mat. Res. Soc. Symp. Proc., vol. 512, pp. 512-516, 1998.
View in Google Scholar
[32] M. Frischholtz, J. Seidel, A. Schoner, U. Gustafsson, M. Bakowski, K. Nordgren, and K. Rottner, "JTE concept evaluation and failure analysis: OBIC measurements on 4H SiC p+-n diodes", in Proc. 10th ISPSD, Kyoto, Japan, June 3-6, 1998, pp. 391-394.
View in Google Scholar
[33] N. Keskar, K. Shenai, and P. Neudeck, "Characterisation and modeling of SiC p-n diode", Mat. Sci. Forum, vol. 338-342, pp. 1351-1354, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 190).
View in Google Scholar
[34] A. Galeckas, J. Linnros, and B. Breitholtz, "Optical characterisation of 4H-SiC p + n?n + structures applying time and spectrally resolved emission microscopy", Mat. Sci. Forum, vol. 338-342, pp. 683-686, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 196).
View in Google Scholar
[35] N. Ramungul and T. P. Chow, "Current-controlled negative resistance (CCNR) in SiC PiN rectifiers", IEEE Trans. Electron Dev., vol. 46, no. 3, pp. 493-496, 1999.
View in Google Scholar
[36] T. Kimoto, N. Miyamoto, and H. Matsunami, "Performance limiting surface defects in SiC epitaxial p-n junction diodes", IEEE Trans. Electron Dev., vol. 46, no. 3, pp. 471-477, 1999.
View in Google Scholar
[37] P. G. Neudeck, W. Huang, and M. Dudley, "Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (< 250 V) 4H-SiC p + n junction diodes. Part I: DC properties", IEEE Trans. Electron Dev., vol. 46, no. 3, pp. 478-484, 1999.
View in Google Scholar
[38] P. G. Neudeck and C. Fazi, "Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (< 250 V) 4HSiC p+n junction diodes. Part II: Dynamic breakdown properties", IEEE Trans. Electron Dev., vol. 46, no. 3, pp. 485-492, 1999.
View in Google Scholar
[39] L. A. Lipkin and J. P. Palmour, "Insulator investigation on SiC for improved reliability", IEEE Trans. Electron Dev., vol. 46, no. 3, pp. 525-532, 1999.
View in Google Scholar
[40] S. Sridevan, P. K. McLarty, and B. J. Baliga, "Analysis of gate dielectrics for SiC power UMOSFETs", in Proc. 9th ISPSD, Weimar, Germany, May 26-29, 1997, pp. 153-156.
View in Google Scholar
[41] L. A. Lipkin and J. P. Palmour, "SiC devices with ONO stacked dielectrics", Mat. Sci. Forum, vol. 338-342, pp. 1093-1096, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 348).
View in Google Scholar
[42] W. J. Zhu, X. W. Wang, and T. P. Ma, "Highly durable SiC n-MESFET at 450?C", Mat. Sci. Forum, vol. 338-342, pp. 1311-1314, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 464).
View in Google Scholar
[43] C. I. Harris, M. O. Aboelfotoh, R. S. Kern, S. Tanaka, and R. F. Davis, "Low interface state densities in SiC MIS devices using epitaxial AlN", Inst. Phys. Conf. Ser., vol. 142, pp. 777-780, 1995.
View in Google Scholar
[44] C. M. Zetterling, M. Ostling, H. Yano, T. Kimoto, H. Matsunami, K. Linthicum, and R. F. Davis, "SiC MISFETs with MBE grown AlN gate dielectric", Mat. Sci. Forum, vol. 338-342, pp. 1315-1318, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 203).
View in Google Scholar
[45] G. Deboy, M. Marz, J.-P. Stengl, H. Sack, J. Tihanyi, and H. Weber, "A new generation of high voltage MOSFETs breaks the limit line of silicon", in Proc. IEDM, San Francisco, CA, Dec. 6-9, 1998, pp. 683-685.
View in Google Scholar
[46] L. Lorenz, G. Deboy, M. Marz, J.-P. Stengl, and A. Bachofner, "Drastic reduction of on-resistance with COOLMOS", PCIM Eur., vol. 5, pp. 250-258, 1998.
View in Google Scholar
[47] L. Lorenz, G. Deboy, A. Knapp, and M. Marz, "COOLMOS TM - a new milestone in high voltage power MOS", in Proc. 11th ISPSD, Toronto, Ontario, Canada, May 25-28, 1999, pp. 3-10.
View in Google Scholar
[48] R. Schorner, P. Friedrichs, D. Peters, and D. Stephani, "Significantly improved performance of MOSFET's on silicon carbide using the 15R-SiC polytype", IEEE Electron Dev. Lett., vol. 20, no. 5, pp. 241-244, 1999.
View in Google Scholar
[49] M. Bassler, V. Afanasjev, and G. Pensl, "Electrically active traps at the 4H-SiC/SiO 2 interface responsible for the limitation of the channel mobility", Mat. Sci. Forum, vol. 338-342, pp. 1065-1068, 2000 (abstracts of 4th ICSCRM, Research Triangle Park, NC, Oct. 10-15, 1999, abstract 239).
View in Google Scholar
[50] M. Bakowski and U. Gustafsson, "Optimisation and comparison of losses in Si and 4H SiC 1 kV trench MOSFETs", in Proc. 26th Eur. Solid State Dev. Res. Conf., 1996, pp. 583-586.
View in Google Scholar
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