Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime

Authors

DOI:

https://doi.org/10.26636/jtit.2004.1.227

Keywords:

sub-100 nm MOSFET, two-dimensional device modeling, conformal mapping, threshold voltage, subthreshold regime, leakage current

Abstract

Closed-form 2D modeling of deep-submicron and sub-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200-250 nm, and for a super-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and quantitatively the experimental data obtained for such devices.

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Submitted

2023-04-08

Published

2004-03-30

Issue

No. 1 (2004)

Section

ARTICLES FROM THIS ISSUE

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Copyright (c) 2004 Journal of Telecommunications and Information Technology

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This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
J. Østhaug, T. A. Fjeldly, and B. Iniguez, “Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime”, JTIT, vol. 15, no. 1, pp. 70–79, Mar. 2004, doi: 10.26636/jtit.2004.1.227.