Firek, Piotr, and Jan Szmidt. “ Technology of MISFET With SiO2 BaTiO3 System As a Gate Insulator”. Journal of Telecommunications and Information Technology 38, no. 4 (December 30, 2009): 61–64. Accessed May 23, 2026. https://www.jtit.pl/jtit/article/view/972.