FIREK, Piotr; SZMIDT, Jan. Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator. Journal of Telecommunications and Information Technology, Warsaw, Poland, v. 38, n. 4, p. 61–64, 2009. DOI: 10.26636/jtit.2009.4.972. Disponível em: https://www.jtit.pl/jtit/article/view/972. Acesso em: 10 jun. 2026.