ZAUNERT, Florian; ENDRES, Ralf; STEFANOV, Yordan; SCHWALKE, Udo. Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data. Journal of Telecommunications and Information Technology, Warsaw, Poland, v. 28, n. 2, p. 78–85, 2007. DOI: 10.26636/jtit.2007.2.812. Disponível em: https://www.jtit.pl/jtit/article/view/812. Acesso em: 15 jun. 2026.