RZODKIEWICZ, Witold; SAWICKI, Zbigniew. Effects of stress annealing on the electrical and the optical properties of MOS devices. Journal of Telecommunications and Information Technology, Warsaw, Poland, v. 19, n. 1, p. 115–119, 2005. DOI: 10.26636/jtit.2005.1.282. Disponível em: https://www.jtit.pl/jtit/article/view/282. Acesso em: 17 jun. 2026.