Modeling, Simulation and Calibration of Silicon Wet Etching

Authors

  • Andrzej Kociubiński
  • Mariusz Duk
  • Tomasz Bieniek
  • Paweł Janus

DOI:

https://doi.org/10.26636/jtit.2009.4.974

Keywords:

anisotropic wet etching, KOH, silicon technology

Abstract

The methods of parameter optimization in Etch3DTM simulator and the results of the comparison of simulations of silicon etching in KOH with experiments are presented. The aim of this study was to calibrate the tool to a set of process conditions that is offered by Institute of Electron Technology (ITE). The Taguchi approach was used to analyze the influence of every remove probability function (RPF) parameter on one or more output parameters. This allowed tuning the results of simulation to the results of real etching performed in ITE.

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Published

2009-12-30

Issue

No. 4 (2009)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
A. Kociubiński, M. Duk, T. Bieniek, and P. Janus, “Modeling, Simulation and Calibration of Silicon Wet Etching”, JTIT, vol. 38, no. 4, pp. 65–70, Dec. 2009, doi: 10.26636/jtit.2009.4.974.

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