Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys
DOI:
https://doi.org/10.26636/jtit.2007.3.837Keywords:
silicon carbide, SiC MOSFET, 4H-SiC, 6H-SiC, Crosslight Apsys, Silvaco AtlasAbstract
A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments.
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