Oxidation kinetics of silicon strained by silicon germanium

Authors

DOI:

https://doi.org/10.26636/jtit.2007.3.824

Keywords:

oxidation, kinetics, modeling, silicon, silicon germanium

Abstract

This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation. The oxidation kinetics was studied using the parallel model proposed by Beck and Majkusiak. This model was fitted with good result to the obtained experimental data and the parameter that is most probably responsible for the strain effect was identified, as well as its dependence on Ge content in the SiGe layer.

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References

[1] D. J. Paul, „Silicon-germanium strained layer materials in microelectronics”, Adv. Mater., vol. 11, no. 3, pp. 191-194, 1999.
View in Google Scholar

[2] K. Rim, „Strained Si CMOS (SS CMOS) technology: opportunities and challenges”, Solid-State Electron., vol. 47, pp. 1133-1139, 2003.
View in Google Scholar

[3] E. H. C. Parker and T. E. Whall, „SiGe heterostructure CMOS circuits and applications”, Solid-State Electron., vol. 43, pp. 1497-1506, 1999.
View in Google Scholar

[4] R. B. Beck, „Modelowanie procesów utleniania krzemu”, Prace Naukowe Elektronika, z. 113. Warszawa: Oficyna Wydawnicza Politechniki Warszawskiej, 1995 (in Polish).
View in Google Scholar

[5] R. B. Beck and B. Majkusiak, „Kinetyka wzrostu cienkiego termicznego tlenku krzemu”, in Mat. II Konf. Nauk. Technol. Elektron. ELTE’84, Rynia, Poland, 1984, pp. 57-59 (in Polish).
View in Google Scholar

[6] R. B. Beck and B. Majkusiak, „The initial growth rate of thermal silicon oxide”, Phys. Stat. Sol., vol. 116, pp. 313-329, 1989.
View in Google Scholar

[7] R. B. Beck and B. Majkusiak, „The model of growth kinetics of very thin thermal silicon oxide layer”, Electron Technol., vol. 21, pp. 65-79, 1988.
View in Google Scholar

[8] B. E. Deal and A. S. Grove, „General relationships for the thermal oxidation of silicon”, J. Appl. Phys., vol. 36, pp. 3770-3778, 1965.
View in Google Scholar

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Submitted

2023-06-25

Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
J. Grabowski and R. B. Beck, “Oxidation kinetics of silicon strained by silicon germanium”, JTIT, vol. 29, no. 3, pp. 30–32, Sep. 2007, doi: 10.26636/jtit.2007.3.824.

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