High-temperature instability processes in SOI structures and MOSFETs

Authors

  • Alexei N. Nazarov
  • V. I. Kilchytska
  • Ja. N. Vovk
  • J. P. Colinge

DOI:

https://doi.org/10.26636/jtit.2001.1.47

Keywords:

SOI, MOSFET, high-temperature instability, ZMR, SIMOX

Abstract

The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI struc- tures are presented. The studies are focused mainly on elec- trical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high- temperature kink effects in SOI MOSFETs.

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Published

2001-03-30

Issue

No. 1 (2001)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2001 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
A. N. Nazarov, V. I. Kilchytska, J. N. Vovk, and J. P. Colinge, “High-temperature instability processes in SOI structures and MOSFETs”, JTIT, vol. 3, no. 1, pp. 18–26, Mar. 2001, doi: 10.26636/jtit.2001.1.47.