High-temperature instability processes in SOI structures and MOSFETs

Authors

  • Alexei N. Nazarov Institute of Semiconductor Physics, NASU, Ukraine
  • V. I. Kilchytska Institute of Semiconductor Physics, NASU, Ukraine
  • Ja. N. Vovk Institute of Semiconductor Physics, NASU, Ukraine
  • J. P. Colinge University of California, Davis image/svg+xml

DOI:

https://doi.org/10.26636/jtit.2001.1.47

Keywords:

SOI, MOSFET, high-temperature instability, ZMR, SIMOX

Abstract

The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI structures are presented. The studies are focused mainly on electrical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high-temperature kink effects in SOI MOSFETs.

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References

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Submitted

2023-04-06

Published

2001-03-30

Issue

No. 1 (2001)

Section

ARTICLES FROM THIS ISSUE

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Copyright (c) 2001 Journal of Telecommunications and Information Technology

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How to Cite

[1]
A. N. Nazarov, V. I. Kilchytska, J. N. Vovk, and J. P. Colinge, “High-temperature instability processes in SOI structures and MOSFETs”, JTIT, vol. 3, no. 1, pp. 18–26, Mar. 2001, doi: 10.26636/jtit.2001.1.47.

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