Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator
DOI:
https://doi.org/10.26636/jtit.2004.1.231Keywords:
base transit time, cut-off frequency, HBT, SiGebaseAbstract
The paper is devoted to optimization of SiGe-base HBT with respect to operation speed by means of numerical simulation. The influence of design parameters on fT is studied.
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References
[1] "APSYS user's manual, version 3.6", Crosslight Software Inc., Gloucester, Canada, 2000.
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[2] V. Palankovski and S. Selberherr, "Critical modeling issues of SiGe semiconductor devices", J. Telecommun. Inform. Technol., no. 1, pp. 15-25, 2004.
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[3] J. S. Rieh et al., "SiGe HBTs with cut-off frequency of 350 GHz", IEDM Tech. Dig., 2002.
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Submitted
2023-04-08
Published
2004-03-30
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Copyright (c) 2004 Journal of Telecommunications and Information Technology
This work is licensed under a Creative Commons Attribution 4.0 International License.
How to Cite
[1]
A. Linkowski, L. Łukasiak, and A. Jakubowski, “Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator”, JTIT, vol. 15, no. 1, pp. 36–38, Mar. 2004, doi: 10.26636/jtit.2004.1.231.
