New approach to power semiconductor devices modeling

Authors

DOI:

https://doi.org/10.26636/jtit.2004.1.226

Keywords:

power device modeling, SPICE, circuit simulation, VDMOS, PIN diode, IGBT, web-based simulation

Abstract

The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.

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Submitted

2023-04-08

Published

2004-03-30

Issue

No. 1 (2004)

Section

ARTICLES FROM THIS ISSUE

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How to Cite

[1]
A. Napieralski and M. Napieralska, “New approach to power semiconductor devices modeling”, JTIT, vol. 15, no. 1, pp. 80–89, Mar. 2004, doi: 10.26636/jtit.2004.1.226.