Durov, Sergiy, Oleg A. Mironov, Maksym Myronov, Terence E. Whall, Evan H.C. Parker, Thomas Hackbarth, Georg Hoeck, Hans-Joest Herzog, Ulf Konig, and Hans von Kanel. “DC and Low-Frequency Noise Analysis for Buried SiGe Channel Metamorphic PMOSFETs With High Ge Content”. Journal of Telecommunications and Information Technology 19, no. 1 (March 30, 2005): 101–111. Accessed August 4, 2026. https://www.jtit.pl/jtit/article/view/284.