GIBKI, Jan. An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs. Journal of Telecommunications and Information Technology, Warsaw, Poland, v. 3, n. 1, p. 57–60, 2001. DOI: 10.26636/jtit.2001.1.40. Disponível em: https://www.jtit.pl/jtit/article/view/40. Acesso em: 9 jul. 2026.